- 您现在的位置：买卖IC网 > Sheet目录483 > NDS8425 (Fairchild Semiconductor)MOSFET N-CH 20V 7.4A 8SOIC
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSSF
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V DS = 16 V, V GS = 0 V
V DS = 16 V,V GS = 0 V, T J =55 ° C
V GS = 8 V, V DS = 0 V
20
14
1
10
100
V
mV/ ° C
μ A
nA
I GSSR
Gate–Body Leakage, Reverse
V GS = –8 V
V DS = 0 V
–100
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V GS = 4.5 V, I D = 7.4 A
V GS = 4.5 V, I D = 7.4 A, T J =125 ° C
0.4
0.89
-3
15
21
1.5
22
31
V
mV/ ° C
m ?
V GS =2.7 V, I D =7.2A
19
28
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 4.5 V,
V DS = 5 V,
V DS = 5 V
I D = 7.4 A
20
31
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1098
240
115
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DS = 15 V,
V GS = 4.5 V,
V DS = 10 V,
V GS = 4.5 V
I D = 1 A,
R GEN = 6 ?
I D = 7.4 A,
9
13
26
11
11
2.5
18
24
42
20
18
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
3.1
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
1.9
A
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = 1.9 A
(Note 2)
0.72
1.3
V
Voltage
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 50°/W when
mounted on a 1 in
2
b) 105°/W when
mounted on a .04 in
2
c) 125°/W when mounted on a
minimum pad.
pad of 2 oz copper
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
NDS8425 Rev D (W)
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NDS8434
MOSFET P-CH 20V 6.5A 8-SOIC
NDS8947
MOSFET 2P-CH 30V 4A 8-SOIC
NDS9400A
MOSFET P-CH 30V 3.4A 8-SOIC
NDS9407
MOSFET P-CH 60V 3A 8-SOIC
NDS9945
MOSFET 2N-CH 60V 3.5A 8-SOIC
NDS9948
MOSFET 2P-CH 60V 2.3A 8-SOIC
NDS9952A
MOSFET N+P 30V 2.9A 8-SOIC
NDT014L
MOSFET N-CH 60V 2.8A SOT-223
相关代理商/技术参数
NDS8425
制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS8426
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single N-Channel Enhancement Mode Field Effect Transistor
NDS8426A
功能描述:MOSFET Single N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8426A
制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS8433
功能描述:MOSFET DISC BY MFG 2/02
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8434
功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8434_Q
功能描述:MOSFET Single P-Ch FET Enhancement Mode
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8434A
功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube